Specific Process Knowledge/Lithography/Baking: Difference between revisions

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= Hotplates =
= Hotplates =


==90 C 4" hotplate==   
==Fumehood hotplate==   
[[Image:Hotplates.jpg|300x300px|thumb|Right: Hotplate 90 °C situated in C-1]]
[[Image:Hotplates.jpg|300x300px|thumb|Right: Hotplate 90 °C situated in C-1]]
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
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==110 C 4" hotplate==
[[Image:Hotplates.jpg|300x300px|thumb|Left: Hotplate 110 °C situated in C-1]]
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.
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Revision as of 09:10, 4 November 2014

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Comparing baking methods

HMDS Buffered HF-Clean Oven 250C
Generel description

Vapor priming

Native oxide strip

Dehydration

Chemical

hexamethyldisilazane (HMDS)

12%HF with Ammoniumflouride

none

Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • Blue film
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Glass
Restrictions Type IV and resist/polymer on polymer substrate Wafers with metal is not allowed Resist is not allowed


Hotplates

Fumehood hotplate

Right: Hotplate 90 °C situated in C-1

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

90 C oven

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

120 C oven

Oven 120 °C: positioned in C-1

120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.

250 C oven for pretreatment

Oven 250C for pretreatment: positioned in C-1

UV Lithography


250 C oven for burning resist

Oven 250 °C for burning resist: positioned in C-1

This oven is used for "burning" the resist, therefore not considered clean.