Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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=Oven 250C= | =Oven 250C= | ||
[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment | [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment in C-1]] | ||
The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | ||
'''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=117 Oven 250C]''' | '''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=117 Oven 250C]''' | ||
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