Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
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|General description | |'''General description''' | ||
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Etch of titanium with or without photoresist mask. | Etch of titanium with or without photoresist mask. | ||
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Etch of | Etch of | ||
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|Chemical solution | |'''Chemical solution''' | ||
|HF:NH<math>_4</math>F | |HF:NH<math>_4</math>F | ||
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|Process temperature | |'''Process temperature''' | ||
|Room temperature | |Room temperature | ||
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|Possible masking materials | |'''Possible masking materials''' | ||
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Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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|Etch rate | |'''Etch rate''' | ||
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|Batch size | |'''Batch size''' | ||
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1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
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|Size of substrate | |'''Size of substrate''' | ||
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4" wafers | 4" wafers | ||
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4" wafers | 4" wafers | ||
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|Allowed materials | |'''Allowed materials''' | ||
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No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2. | No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2. | ||