Specific Process Knowledge/Wafer and sample drying: Difference between revisions

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|style="background:WhiteSmoke; color:black"|<b>Spin dryer 4</b>
|style="background:WhiteSmoke; color:black"|<b>Spin dryer 4</b>
|style="background:WhiteSmoke; color:black"|<b>Critical point dryer</b>
|style="background:WhiteSmoke; color:black"|<b>Critical point dryer</b>
|style="background:WhiteSmoke; color:black"|<b>Ethanol Fume dryer</b>
|style="background:WhiteSmoke; color:black"|<b>Ethanol fume dryer</b>
|style="background:WhiteSmoke; color:black"|<b>N<sub>2\sub guns</b>
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!style="background:silver; color:black;" align="center" width="60"|Location
!style="background:silver; color:black;" align="center" width="60"|Location

Revision as of 15:39, 31 October 2014

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Drying Comparison Table

Equipment Spin dryer 1 Spin dryer 2 Spin dryer 3 Spin dryer 4 Critical point dryer Ethanol fume dryer N2\sub guns
Location
  • C-1
  • B-1
  • D-3
  • E-5
  • D-3
  • C-1
Purpose
  • Drying
  • Drying
  • Drying
  • Drying
  • Rinsing + drying
  • Drying sensitive samples. E.g. with cantilevers
  • Drying sensitive samples. E.g. with cantilevers
Substrates Batch size
  • 1-25 100 mm wafers
  • 1-25 100 mm wafers
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • ? 50 mm wafers
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1 to 5 wafers per run. Sizes: 2”, 4" or 6"
  • Pieces (up to 10x10mm)
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers
  • Pieces if a suitable carrier is available
Allowed materials
  • No restrictions
  • Only for RCA cleaned wafers
  • No restrictions
  • No restrictions
  • Si,SiO2, Si3N4
  • Quartz and Pyrex
  • InAlP, GaAs
  • SU8
  • No restriction except for polymers


Choose a drying equipment