Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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Recommended parameters for development of different resists. | Recommended parameters for development of different resists. | ||
AZ 5214E | *'''AZ nLOF''' | ||
Exposure dose: 16s @ 7 mW/cm2 (2 µm) | |||
PEB: 60s @ 110°C | |||
Development: SP 15-30s. For lift-off SP 30-60s | |||
*'''AZ MiR 701''' | |||
Exposure dose: ? | |||
PEB: 60s @ 110°C | |||
Development: SP 60s | |||
*'''AZ 5214E''' | |||
Exposure dose: 8.5s @ 7 mW/cm2 (1.5 µm) | |||
No PEB | |||
Development: SP 60s | |||
*'''AZ 4562''' | |||
Exposure dose: ~60s @ 7 mW/cm2 (10 µm) | |||
No PEB | |||
Development: MP 4x60s | |||
=Standard Processes= | =Standard Processes= | ||