Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions
| Line 8: | Line 8: | ||
===Comparing the two solutions=== | ===Comparing the two solutions=== | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="4" align="left" | ||
! | ! | ||
! Iodine based gold etch | ! Iodine based gold etch | ||
! Aqua Regia (Kongevand) | ! Aqua Regia (Kongevand) | ||
|- | |- | ||
|General description | |'''General description''' | ||
| | | | ||
Etch of pure Gold | Etch of pure Gold | ||
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Etch of pure Gold | Etch of pure Gold | ||
|- | |- | ||
|Chemical solution | |'''Chemical solution''' | ||
|KJ:J<math>_2</math>:H<math>_2</math>O (100g:25g:500ml) | |KJ:J<math>_2</math>:H<math>_2</math>O (100g:25g:500ml) | ||
|HCl:HNO<math>_3</math> (3:1) | |HCl:HNO<math>_3</math> (3:1) | ||
|- | |- | ||
|Process temperature | |'''Process temperature''' | ||
|20 <sup>o</sup>C | |20 <sup>o</sup>C | ||
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|- | |- | ||
|Possible masking materials | |'''Possible masking materials''' | ||
| | | | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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Unmasked - used as a stripper | Unmasked - used as a stripper | ||
|- | |- | ||
|Etch rate | |'''Etch rate''' | ||
| | | | ||
~100 nm/min | ~100 nm/min | ||
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~(??) nm/min - fast etch | ~(??) nm/min - fast etch | ||
|- | |- | ||
|Batch size | |'''Batch size''' | ||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
|- | |- | ||
|Size of substrate | |'''Size of substrate''' | ||
| | | | ||
2-6" wafers | 2-6" wafers | ||
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2-6" wafers | 2-6" wafers | ||
|- | |- | ||
|} | |||
Revision as of 13:01, 31 January 2008
Etching of Gold
Etching of Gold is done wet at Danchip making your own set up in a beaker in the fumehood. We have two different solutions:
- Iodine etch: KI:I:HO - 100g:25g:500ml - standard at Danchip
- Aqua Regia (Kongevand): HNO:HCl - 1:3
Comparing the two solutions
| Iodine based gold etch | Aqua Regia (Kongevand) | |
|---|---|---|
| General description |
Etch of pure Gold |
Etch of pure Gold |
| Chemical solution | KJ:J:HO (100g:25g:500ml) | HCl:HNO (3:1) |
| Process temperature | 20 oC | 20 oC |
| Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Unmasked - used as a stripper |
| Etch rate |
~100 nm/min |
~(??) nm/min - fast etch |
| Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
| Size of substrate |
2-6" wafers |
2-6" wafers |