Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]] | ![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | |||
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* E-beam evaporation of TiO2 | * E-beam evaporation of TiO2 | ||
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*ALD (atomic layer deposition of TiO<sub>2</sub> | |||
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*unknown | *unknown | ||
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* unknown | *unknown | ||
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*Covers sample everywhere (but long purge time needed very very high aspect ratio structures) | |||
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*~10nm - ~200 nm | *~10nm - ~200 nm | ||
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* 0nm - 100nm | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Deposition rate | !Deposition rate | ||
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* 1 - 2 Å/s | * 1 - 2 Å/s | ||
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* Not measured | |||
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*Done at RT. There is a possibility to run at higher temperatures | *Done at RT. There is a possibility to run at higher temperatures | ||
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* Sample temperature can be set to 20-250 <sup>o</sup>C | *Sample temperature can be set to 20-250 <sup>o</sup>C | ||
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub> | |||
*300<sup>o</sup>C - 3450<sup>o</sup>C: Anatase TiO<sub>2</sub> | |||
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | ||
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*1x 2" wafer or | *1x 2" wafer or | ||
*several smaller samples | *several smaller samples | ||
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*1-5 100 mm wafers | |||
*1-5 150 mm wafers | |||
*Several smaller samples | |||
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*Pb and poisonous materials only after special agreement | *Pb and poisonous materials only after special agreement | ||
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*Silicon | |||
*Silicon oxide, silicon nitride | |||
*Quartz/fused silica | |||
*Al, Al<sub>2</sub>O<sub>3</sub> | |||
*Ti, TiO<sub>2</sub> | |||
*Other metals (use dedicated carrier wafer) | |||
*III-V materials (use dedicated carrier wafer) | |||
*Polymers (depending on the melting point/deposition temperature, use carrier wafer) | |||
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