Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

Knil (talk | contribs)
No edit summary
Pevo (talk | contribs)
Line 16: Line 16:
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
|-
|-


Line 28: Line 29:
|
|
* E-beam evaporation of TiO2
* E-beam evaporation of TiO2
|
*ALD (atomic layer deposition of TiO<sub>2</sub>
|-
|-


Line 38: Line 41:
*unknown
*unknown
|
|
* unknown
*unknown
|
*Covers sample everywhere (but long purge time needed very very high aspect ratio structures)
|-
|-


Line 50: Line 55:
|
|
*~10nm - ~200 nm
*~10nm - ~200 nm
|
* 0nm - 100nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
Line 60: Line 68:
|
|
* 1 - 2 Å/s  
* 1 - 2 Å/s  
|
* Not measured
|-
|-


Line 80: Line 90:
*Done at RT. There is a possibility to run at higher temperatures
*Done at RT. There is a possibility to run at higher temperatures
|
|
* Sample temperature can be set to 20-250 <sup>o</sup>C
*Sample temperature can be set to 20-250 <sup>o</sup>C
|
*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
*300<sup>o</sup>C - 3450<sup>o</sup>C: Anatase TiO<sub>2</sub> 
|-
|-


Line 88: Line 101:
|
|
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
|
*
|
|
*
*
Line 93: Line 108:
*
*
|-
|-


|-
|-
Line 113: Line 126:
*1x 2" wafer or
*1x 2" wafer or
*several smaller samples
*several smaller samples
|
*1-5 100 mm wafers
*1-5 150 mm wafers
*Several smaller samples
|-
|-


Line 125: Line 142:
*Pb and poisonous materials only after special agreement
*Pb and poisonous materials only after special agreement
|  
|  
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|-
|-
|}
|}