Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
| About | | About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | ||
|2Å/s to 8Å/s (see below). | |2Å/s to 8Å/s (see below). | ||
| Depends on process parameters, roughly 1 Å/s. | | Depends on process parameters, roughly 1 Å/s. | ||