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The table describes the e-beam resist used in the cleanroom for standard e-beam exposure. Some of resists are not provided by DTU Danchip and some are not yet approved for common use in the cleanroom and are currently being tested. If you wish to test some of these resists or other resists, please contact [mailto:lithography@danchip.dtu.dk Lithography].
The table describes the e-beam resist used in the cleanroom for standard e-beam exposure. Some of resists are not provided by DTU Danchip and some are not yet approved for common use in the cleanroom and are currently being tested. If you wish to test some of these resists or other resists, please contact [mailto:lithography@danchip.dtu.dk Lithography].
Standard DTU Danchip resists purchased and tested by DTU Danchip:


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
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Non-standard DTU Danchip resists not purchased by DTU Danchip:
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:LightGrey; color:black"
|'''PMMA'''
|Positive
|
|We have various types of PMMA in the cleanroom, none are provided by DTU Danchip. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information.
|
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
| MIBK:IPA (1:3), IPA:H2O
|IPA
|acetone/1165/Pirahna
|
|-
|-style="background:WhiteSmoke; color:black"
|'''ma-N 2403'''
|Negative
|Micro Resist
|Approved. Standard negative resist.
|
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|Ma-D333, TMAH, MIF726
|H2O
|acteone/O2 plasma
|
|}


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= Alignment of exposure to existing pattern on wafer =
= Alignment of exposure to existing pattern on wafer =


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