Revision as of 10:48, 10 October 2014

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General Process Information

Processing using Spin Track 1 + 2 is divided into three parts:

HMDS priming
Spin coating
Soft baking

As part of the processing of negative tone resists and chemically amplified positive tone resists, Spin Track 2 may also be used for:

Post-exposure baking (at 110°C)

Features of Spin Track 1 + 2:

Cassette-to-cassette wafer handling
In-line HMDS priming
Temperature controlled resist lines

The resist lines are temperature controlled using 25°C water from a chiller. The priming module coolplate is cooled by the same chiller. If the process flow has been properly designed, the wafer and resist should have the same temperature during spin coating, ensuring good coating reproducibility.

Puddle Development

The process of development

Rinse

Post-exposure baking

Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C coolplate.

Standard Processes

Puddle development

Development on Developer TMAH UV-lithography is divided into the following steps: Pre-wet, puddle dispense, development, spin-off, and finally rinse and dry.

Sequence names and process parameters:

DCH 100mm SP 30s
DCH 100mm SP 60s
DCH 150mm SP 60s

Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above.

Post-exposure baking (PEB)

Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light.

Flow names and process parameters:

DCH PEB 110C 60s

Process parameters: 60s bake at 110°C.

Combined PEB and development

For convenience, the PEB and development function of the machine may be combined in one sequence.

Flow names and process parameters:

DCH 100mm PEB60s@110C+SP60s

A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 60s' development.

@@ Line 21: / Line 21: @@
 ==Post-exposure baking==
-Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface by vacuum during the bake. In a proximity bake, the wafer is first moved into close proximity, e.g. 1mm, of the hotplate surface, then held there for the duration of the bake. Since the hotplate temperatures of Spin Track 1 + 2 are fixed, PEB is only possible at 90°C or 110°C. In practice, only 110°C (Spin Track 2) is used. After baking, the wafer is cooled for 5 seconds on the coolplate.
+Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C coolplate.
 =Standard Processes=