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| ==Puddle development== | | ==Puddle development== |
| Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-off at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.
| | Development on Developer TMAH UV-lithography is divided into the following steps: Pre-wet, puddle dispense, development, spin-off, and finally rinse and dry. |
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| ''Flow names, process parameters, and test results:'' | | ''Sequence names and process parameters:'' |
| *'''T1 MiR 701 1um no HMDS''' | | *'''DCH 100mm SP 30s''' |
| *'''T1 MiR 701 1um with HMDS''' | | *'''DCH 100mm SP 60s''' |
| Spin-off: 60 s at 9990 rpm.
| | *'''DCH 150mm SP 60s''' |
| | | Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. |
| {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"
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| |-style="background:silver; color:black"
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| !Substrate
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| !Thickness
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| !Uniformity (+/-)
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| !Test date
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| !Tester initials
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| !Comments
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| |-style="background:WhiteSmoke; color:black"
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| |Silicon with native oxide
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| |1.053
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| |0.33%
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| |5/9 2013
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| |taran
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| |with HMDS. Average of 3 wafers
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| |}
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| ==Post-exposure baking (PEB)== | | ==Post-exposure baking (PEB)== |
