Specific Process Knowledge/Doping: Difference between revisions
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*900°C - 1150°C | *900°C - 1150°C | ||
*Removal of the phosphorous glass is done by a short BHF etch. Often further annealing is desired in order to drive in and redistribute the dopants in the material. This is done in either high temperature annealing furnaces or by rapid thermal annealing. | |||
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*1050°C - 1125°C | *1050°C - 1125°C | ||
*Removal of the the boron glass is done by a dry oxidation process in the boron drive in furnace (A1) followed by a BHF etch. Often further annealing is desired in order to drive in and redistribute the dopants in the material. This is done in either high temperature annealing furnaces or by rapid thermal annealing. | |||
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*300°C | *300°C | ||
*A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1100°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | |||
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*560°C - 620°C | *560°C - 620°C | ||
*In most cases you need a high temperature step redistribute the dopants in the material and alter the crystalinity. This is typically done at 800°C - 1100°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | |||
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