Specific Process Knowledge/Doping: Difference between revisions
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!Dopant | !Dopant | ||
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* | *Phosporous (POCL) | ||
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*Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | *Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | ||
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* | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub>) | ||
*Germane (GeH<sub>4</sub>) | *Germane (GeH<sub>4</sub>) | ||
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* | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | ||
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*150 mm wafers | *150 mm wafers | ||
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*100 mm wafers (Boron and | *100 mm wafers (Boron and Phosphorous) | ||
*150 mm wafers (only Boron) | *150 mm wafers (only Boron) | ||
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