Specific Process Knowledge/Doping: Difference between revisions
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This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane. | This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane. | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in | |||
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | |||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P | |||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass | ||
*[[Specific Process Knowledge/Doping#Ion implantation|Ion implantation]] | *[[Specific Process Knowledge/Doping#Ion implantation|Ion implantation]] | ||