Specific Process Knowledge/Doping

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.

• Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
• Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
• Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
• PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
• Ion implantation

Comparison of different doping processed

	Phosphorous predep	Boron predep	PECVD doped thin film	Doped Poly Si
Generel description	Dopants introduced by diffusion from gas-phase (POCL)	Dopants introduced by diffusion from solid source wafers	Deposition of doped thin film (oxides or nitrides)	Dopants introduced by in-situ doping of poly/amorphous Si
Process Temperature1	900°C - 1100°C	900°C - 1100°C	300°C	580°C - 620°C
Parameter 2	A B C	A B	A B	A B
Substrate size	100 mm wafers	100 mm wafers	small samples 50 mm wafers 100 mm wafers	100 mm wafers (Boron and Phosphor) 150 mm wafers (only Boron)
Allowed materials	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride

¹ In most cases you need a high temperature step to drive in and redistribute the dopant in the material. This is done at 800°C - 1100°C in either high temperature annealing furnaces or by rapid thermal annealing.

Ion implantation

Ion implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm