Specific Process Knowledge/Doping

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.

• PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
• Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
• Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
• Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
• Ion implantation

Comparison method 1 and method 2 for the process

	Phosphor predep	Boron predep	PECVD doped thin film	Doped Poly Si
Generel description	Dopants introduced by diffusion from gas-phase (POCL)	Dopants introduced by diffusion from solid source wafers	Deposition of doped thin film (oxides or nitrides)	Dopants introduced by in-situ doping of poly/amorphous Si
Parameter 1	A B	A B	A B	A B
Parameter 2	A B C	A B	A B	A B
Substrate size	30 100 mm wafers	14 100 mm wafers	small samples 50 mm wafers 1-3 100 mm wafers	30 100 mm wafers (Boron and Phosphor) 30 150 mm wafers (only Boron)
Allowed materials	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride	Silicon Poly/amorphous silicon Oxide Nitride

Ion implantation

Ion beam implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at: http://www.ion-beam-services.com/about_us.htm