Specific Process Knowledge/Direct Structure Definition: Difference between revisions

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== Comparison of equipment/material ==
== Comparison of equipment/material ==
* prøveformat/størrelse
* forudsætninger
* mønsterdannelse
* throughput
* min/max featuresize
* min/max aspect-ratio
* post-treatment
* degree of freedom


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Revision as of 12:59, 6 October 2014

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Direct Structure Definiton

Define the structure directly on your sample
Define the structure directly on your sample

By direct structure definition we mean that you form the structures for you device directly in the material that the device consist of without any masking steps.

Advantages of direct structure definition may be ..

  • Quicker process because no need for masking steps
  • In some cases the structure is defined directly by a computer, so changes in the design can be made very quickly.

Dis-advantages could be

  • Limited choice of materials
  • Limited resolution

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Choose method of structuring/equipment

Materials for structuring

Comparison of equipment/material

  • prøveformat/størrelse
  • forudsætninger
  • mønsterdannelse
  • throughput
  • min/max featuresize
  • min/max aspect-ratio
  • post-treatment
  • degree of freedom
Polymers Nano Imprint Lithography 2-Photon Polymerization Lithography Polymer Injection Molder Laser Micromachining Tool
Generel description Low Pressure Chemical Vapour Deposition (LPCVD furnace process) Plasma Enhanced Chemical Vapour Deposition (PECVD process) Reactive sputtering
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Pure quartz (fused silica)

Processed wafers have to be RCA cleaned

  • Silicon
  • Silicon oxide (with boron, phosphorous and germanium)
  • Silicon nitrides (with boron, phosphorous and germanium)
  • Pure quartz (fused silica)
Any
Metals/Silicon/Glass Nano Imprint Lithography 2-Photon Polymerization Lithography Polymer Injection Molder Laser Micromachining Tool
Generel description Low Pressure Chemical Vapour Deposition (LPCVD furnace process) Plasma Enhanced Chemical Vapour Deposition (PECVD process) Reactive sputtering
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Pure quartz (fused silica)

Processed wafers have to be RCA cleaned

  • Silicon
  • Silicon oxide (with boron, phosphorous and germanium)
  • Silicon nitrides (with boron, phosphorous and germanium)
  • Pure quartz (fused silica)
Any