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| style="background: LightGray"| [[/Bonding| Temporary bonding]]
| style="background: LightGray"| [[/Bonding| Temporary bonding]]
| style="background: #DCDCDC"| Processing different sizes of substrates by bonding to carriers
| style="background: #DCDCDC"| Processing different sizes of substrates by bonding to carriers
|-
|}
== Hardware and option comparison of the dry etchers at Danchip ==
The table below compares the hardware and the options.
{| border="2" cellspacing="0" cellpadding="0" align="center"
! colspan="2" style="background:silver; color:black" |
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/RIE_(Reactive_Ion_Etch)| RIE2]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasus]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
|- valign="top"
! rowspan="2" style="background:silver; color:black" width="120" |Purpose
! style="background:WhiteSmoke; color:black" | Primary uses
| style="background:WhiteSmoke; color:black"| The RIE chamber for etching of:
* silicon
* silicon oxides/nitrides
The users are allowed to have 5% metal exposed to the plasma
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers may also be etched
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black"| Silicon etching
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs
|- valign="top"
! style="background:lightgrey; color:black" | Alternative/backup uses
| style="background:lightgrey; color:black" | Shallow silicon etches
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
|- valign="top"
! rowspan="7" style="background:silver; color:black" | General description
! style="background:WhiteSmoke; color:black" | Plasma source
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
|-valign="top"
! style="background:lightgrey; color:black" | Substrate cooling/temperature
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: 0<sup>o</sup>C to 50<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C
|-valign="top"
! style="background:WhiteSmoke; color:black" | Clamping
| style="background:WhiteSmoke; color:black" | No clamping
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | No clamping
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)
|-valign="top"
! style="background:lightgrey; color:black" | Gasses
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| CF<sub>4</sub>
|-
| N<sub>2</sub>
| Ar
| CHF<sub>3</sub>
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| Ar
| CO<sub>2</sub>
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| H<sub>2</sub>
| CF<sub>4</sub>
| He
|}
|style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| Ar
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| Ar
| CF<sub>4</sub>
| H<sub>2</sub>
|-
| CH<sub>4</sub>
| BCl<sub>3</sub>
| Cl<sub>2</sub>
|-
| HBr
|}
| style="background:lightgrey; color:black" |
{|
| O<sub>2</sub>
| CHF<sub>3</sub>
| CH<sub>4</sub>
|-
| Ar
| H<sub>2</sub>
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| CF<sub>4</sub>
|-
| Ar
| CH<sub>4</sub>
| H<sub>2</sub>
|-
| HBr
| BCl<sub>3</sub>
| Cl<sub>2</sub>
|}
|-valign="top"
!  style="background:WhiteSmoke; color:black" | RF generators
| style="background:WhiteSmoke; color:black" | 
* RF generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
* Low frequency platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* RF generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|-valign="top"
! style="background:lightgrey; color:black" | Substrate loading
| style="background:lightgrey; color:black" | Loading via cluster 2 load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
|-valign="top"
!  style="background:WhiteSmoke; color:black" | Options
| style="background:WhiteSmoke; color:black" | Optical endpoint detector at fixed wavelength
| style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
|  style="background:WhiteSmoke; color:black" |
|  style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
* SOI option
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Parameter ramping
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Laser endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Parameter ramping
* Bosch multiplexing
* Optical endpoint detection
* Laser endpoint detection
|-valign="top"
! style="background:silver; color:black"| Allowed materials
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
|-
|-
|}
|}
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