Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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! Nitride etch @ 180 <sup>o</sup>C | ! Nitride etch @ 180 <sup>o</sup>C | ||
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|General description | |General description | ||
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Etch/strip of silicon nitride | Etch/strip of silicon nitride | ||
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|Chemical solution | |Chemical solution | ||
|H<sub>3</sub>PO<sub>4</sub> (85 wt%) | |H<sub>3</sub>PO<sub>4</sub> (85 wt%) | ||
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|Process temperature | |Process temperature | ||
|180 <sup>o</sup>C | |180 <sup>o</sup>C | ||
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|Possible masking materials: | |Possible masking materials: | ||
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*Thermal oxide (converted si-rich surface) | *Thermal oxide (converted si-rich surface) | ||
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*~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>) | *~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>) | ||
*~4 Å/min (Thermal oxide) | *~4 Å/min (Thermal oxide) | ||
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|Batch size | |Batch size | ||
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1-25 wafers at a time | 1-25 wafers at a time | ||
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|Size of substrate | |Size of substrate | ||
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2-6" wafers | 2-6" wafers | ||
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