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Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

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====Results (1)====
====Results (1)====


The figure 1 shows that the silicon dioxide thickness over the boat is affected the most by process time, temperature and steamer flow rate respectively. When the process time, temperature and steamer flow rate increase, the silicon dioxide thickness also increases. Since the steamer flow has the least an effect to the silicon dioxide thickness, so the flow rate has been fixed at 10 liters per minutes in the furnace recipe.
The figure 1 shows that the silicon dioxide thickness over the boat is affected the most by growth time, temperature and steamer flow rate respectively. When the growth time, temperature and steamer flow rate increase, the silicon dioxide thickness also increases. Since the steamer flow has the least an effect to the silicon dioxide thickness, so the flow rate has been fixed at 10 liters per minutes in the furnace recipe.




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The percent of film non-uniformity over the boat most likely depends on the silicon dioxide thickness. The thicker silicon dioxide gives better film uniformity. The figure 1 shows that the percent of film non-uniformity over the boat decreases, when the process time, steamer flow rate and the temperature increase.
The percent of film non-uniformity over the boat most likely depends on the silicon dioxide thickness. The thicker silicon dioxide gives better film uniformity. The figure 1 shows that the percent of film non-uniformity over the boat decreases, when the growth time, steamer flow rate and the temperature increase.




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[[image:Steamer_process_develop_fig2.png|527 × 324 px|middle|The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with process time, steamer flow rate and temperature.]]
[[image:Steamer_process_develop_fig2.png|527 × 324 px|middle|The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with growth time, steamer flow rate and temperature.]]


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'''Figure 2.''' The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with process time, steamer flow rate and temperature.
'''Figure 2.''' The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with growth time, steamer flow rate and temperature.
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The effect of the steamer flow rate, process time and temperature to the silicon dioxide thickness and to the percent of film non-uniformity over the wafer is quite similar with over the boat. But the percent of film non-uniformity over the boat is lower than over the boat, and the steamer flow has almost no an effect on the film uniformity.
The effect of the steamer flow rate, growth time and temperature to the silicon dioxide thickness and to the percent of film non-uniformity over the wafer is quite similar with over the boat. But the percent of film non-uniformity over the boat is lower than over the boat, and the steamer flow has almost no an effect on the film uniformity.




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The figure 3 shows that the percent different of silicon dioxide thickness deceases when the process temperature and time increase, which means that the steamer flow rate has less effect on the thicker silicon dioxide film.
The figure 3 shows that the percent different of silicon dioxide thickness deceases when the process temperature and growth time increase, which means that the steamer flow rate has less effect on the thicker silicon dioxide film.


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