Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Comparing the seven annealing equipments== | ==Comparing the seven annealing equipments== | ||
{| {{table}} border=" | {| {{table}} border="2" cellspacing="0" cellpadding="8" | ||
| align="center" style="background:#f0f0f0;"|'''''' | | valign="top" align="center" style="background:#f0f0f0;"|'''''' | ||
| align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | ||
| align="center" style="background:#f0f0f0;"|'''Nobel furnace''' | | valign="top" align="center" style="background:#f0f0f0;"|'''Nobel furnace''' | ||
| align="center" style="background:#f0f0f0;"|'''RTP''' | | valign="top" align="center" style="background:#f0f0f0;"|'''RTP''' | ||
|- | |-valign="top" | ||
! General description | ! General description | ||
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing. | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing. | ||
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!Process temperature [ <sup>o</sup>C ] | !Process temperature [ <sup>o</sup>C ] | ||
|800-1150||800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||? | |800-1150||800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||? | ||
|- | |-valign="top" | ||
! Batch size | ! Batch size | ||
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||? | |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||? | ||
|- | |- | ||
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | ||
| align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | ||
| align="center" style="background:#f0f0f0;"|'''Nobel''' | | valign="top" align="center" style="background:#f0f0f0;"|'''Nobel''' | ||
| align="center" style="background:#f0f0f0;"|'''RTP''' | | valign="top" align="center" style="background:#f0f0f0;"|'''RTP''' | ||
|- | |- | ||
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x||x||x | | New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x||x||x | ||