Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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[[Image:Wet_PolySi_etch.jpg|300x300px|thumb|Wet PolySilicon Etch (in the middle): positioned in cleanroom 4]] | [[Image:Wet_PolySi_etch.jpg|300x300px|thumb|Wet PolySilicon Etch (in the middle): positioned in cleanroom 4]] | ||
The wet Poly-Silicon Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. | The wet Poly-Silicon Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. The Poly-Silicon Etch process is placed in a dedicated PP-tank in cleanroom 4. | ||
Etching of silicon nitride - stoichiometric and si-rich - is done in a dedicated laminar flow bench with an integrated quartz tank (Tiger Tank - TT-4). The quartz tank can take up to one 6" wafer carrier. The flow bench is placed in cleanroom 4. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer. | Etching of silicon nitride - stoichiometric and si-rich - is done in a dedicated laminar flow bench with an integrated quartz tank (Tiger Tank - TT-4). The quartz tank can take up to one 6" wafer carrier. The flow bench is placed in cleanroom 4. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer. | ||