Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

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-[[image:Steamer_process_develop_fig3.png|527 × 324 px|middle|The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with process time, steamer flow rate and temperature.]]
+[[image:Steamer_process_develop_fig3.png|527 × 324 px|middle|The percent different of the silicon dioxide thickness at the steamer flow rate at 10 and 25 l/min variation with temperature.]]
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 ====Results (2)====
+'''
+[[image:Steamer_process_develop_fig4.png|527 × 324 px|middle|Silicon dioxide thickness variation with growth time (from 0 to 720 minutes) in different temperature.]]