Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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''' | ''' | ||
====Experimental setup==== | ====Experimental setup (1)==== | ||
''' | ''' | ||
The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | ||
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'''Test Wafers:''' N-Type <100> No RCA Clean | '''Test Wafers:''' N-Type <100> No RCA Clean | ||
====Results==== | ====Results (1)==== | ||
The figure 1 shown that the silicon dioxide thickness over the boat is affected the most by process time, temperature and steamer flow rate respectively. When the process time, temperature and steamer flow rate increase, the silicon dioxide thickness also increases. Since the steamer flow has the least an effect to the silicon dioxide thickness, so the flow rate has been fixed at 10 liter per minutes in the furnace recipe. | The figure 1 shown that the silicon dioxide thickness over the boat is affected the most by process time, temperature and steamer flow rate respectively. When the process time, temperature and steamer flow rate increase, the silicon dioxide thickness also increases. Since the steamer flow has the least an effect to the silicon dioxide thickness, so the flow rate has been fixed at 10 liter per minutes in the furnace recipe. | ||
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''' | ''' | ||
====Experimental setup (2)==== | |||
''' | |||
The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | |||
'''Pressure:''' Atmosphere | |||
'''Temperature:''' 1000, 1050, 1100 C | |||
'''Time:''' 0, 5, 15, 100, 180,250, 360, 720 minutes | |||
'''Steamer Flow Rate:''' 10 L/min | |||
'''Anneal:''' Same as process temperature for 20 minutes with N2: 6 SLM | |||
'''Test Wafers:''' N-Type <100> No RCA Clean | |||
====Results (2)==== | |||