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The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity.

Test of the wet oxidation by steamer

Purpose

To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide thinkness and the percent of film non-uniformity.

Experimental setup

The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24.

Pressure: Atmosphere

Temperature: 1000, 1050, 1100 C

Time: 15, 180, 360, 720 minutes

Steamer Flow Rate: 10, 17.5, 25 L/min

Anneal: Same Temperature for 20 minutes with N2: 6 SLM

Test Wafers: N-Type <100> No RCA Clean

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 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxcidation_C1_furnace click here]'''
+The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity.
+'''
+==Test of the wet oxidation by steamer==
+'''
+'''
+====Purpose====
+'''
+To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide thinkness and the percent of film non-uniformity.
+'''
+====Experimental setup====
+'''
+The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24.
+'''Pressure:'''  Atmosphere
+'''Temperature:''' 1000, 1050, 1100 C
+'''Time:''' 15, 180, 360, 720 minutes
+'''Steamer Flow Rate:''' 10, 17.5, 25 L/min
+'''Anneal:''' Same Temperature for 20 minutes with N2: 6 SLM
+'''Test Wafers:''' N-Type <100> No RCA Clean