Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
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During a process, the plasma dissociates the gas molecules present in the process chamber into reactive species that emit light at certain wavelengths. This means that the light coming from the process chamber will be a spectrum in which elements of both process gases and process reactants are found. By analyzing the spectrum we can keep track of when certain species change concentration, i.e. when, for instance, the etch of a thin layer is complete. This is the end point of the etch hence the name. | During a process, the plasma dissociates the gas molecules present in the process chamber into reactive species that emit light at certain wavelengths. This means that the light coming from the process chamber will be a spectrum in which elements of both process gases and process reactants are found. By analyzing the spectrum we can keep track of when certain species change concentration, i.e. when, for instance, the etch of a thin layer is complete. This is the end point of the etch hence the name. | ||
The DRIE-Pegasus, the ICP Metal Etcher and the III-V ICP are all equipped | The DRIE-Pegasus, the ICP Metal Etcher and the III-V ICP are all equipped with a Verity SD1024 Spectrometer and the SpectraView software package. The SpectraView software enables you to monitor any number of any wavelength in the 200-800 nm range and do complicated mathematical analysis of the spectra. | ||
The SpectraView software enables you to monitor any number of any wavelength in the 200-800 nm range. | |||
== Temporary bonding of wafers or chips for dry etching == | == Temporary bonding of wafers or chips for dry etching == | ||