Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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 | align="center" style="background:#f0f0f0;"|'''D1 APOX'''
 | align="center" style="background:#f0f0f0;"|'''Noble'''
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 ! General description
 |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides||Oxidation and annealing for all materials.
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 !Cleanliness of wet oxide (rated 1-4, 1 is best)
 |1||1||2||3||4||3||.
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 ! Batch size
 |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"||?