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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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*Isotropic
*Isotropic
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|style="background:LightGrey; color:black"|Etch rates
|style="background:LightGrey; color:black"|[[/BHF Etch rates|Etch rates]]See more
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*'''Wet thermal oxide:~80nm/min''' *PECVD1 (standard):~147nm/min
*Wet thermal oxide:75-80nm/min  
*'''TEOS:~265nm/min'''
*'''Stoichiometric Si3N4:~0.75nm/min''' (Morten Bo Mikkelsen, March 2013)
*'''Silicon rich SiN: 0.41nm/min''' (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013)
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*'''Wet thermal oxide:~25nm/min'''
*Wet thermal oxide:~25nm/min  
*'''PECVD1 (standard):~87nm/min''' *TEOS:~153nm/min
*'''Silicon rich SiN: 0.6nm/min''' (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013)
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*'''Boronfloat and quartz: ~3-4 μm/min'''
*Boronfloat and quartz: ~3-4 μm/min
*'''Silicon rich SiN: 2.68nm/min in 30% HF''' (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013)
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*A little higher etch rates than BHF
*A little higher etch rates than BHF
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