Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
| Line 11: | Line 11: | ||
{| border="2" cellspacing="0" cellpadding="0" align="center" | {| border="2" cellspacing="0" cellpadding="0" align="center" | ||
! colspan="2" style="background:silver; color:black" | | ! colspan="2" style="background:silver; color:black" width="200"| | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/RIE_(Reactive_Ion_Etch)| RIE2]] | ! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/RIE_(Reactive_Ion_Etch)| RIE2]] | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]] | ! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]] | ||
| Line 251: | Line 251: | ||
|- | |- | ||
|} | |} | ||
== Temporary bonding of wafers or chips for dry etching == | == Temporary bonding of wafers or chips for dry etching == | ||