Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

@@ Line 42: / Line 42: @@
 *PECVD-oxide
 |
-Photoresist (1.5 µm AZ5214E)
+*Thermal oxide (converted si-rich surface)
+*LPCVD-oxide (TEOS)
+*PECVD-oxide
 |-
 |Etch rate
 |
-~100 nm/min (Pure Al)
+*~84 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
+*~84 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
+*~84 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
 |
 ~(??) nm/min