Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''D1 APOX''' | | align="center" style="background:#f0f0f0;"|'''D1 APOX''' | ||
| align="center" style="background:#f0f0f0;"|'''Noble''' | |||
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! General description | ! General description | ||
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides||Oxidation and annealing for all materials. | ||
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! Dry oxidation | ! Dry oxidation | ||
|x||x||x (with special permission)||x||x||. | |x||x||x (with special permission)||x||x||.||x (after request) | ||
|- | |- | ||
!wet oxidation with torch (H2+O2) | !wet oxidation with torch (H2+O2) | ||
|x||x||.||.||.||. | |x||x||.||.||.||.||. | ||
|- | |- | ||
!Wet oxidation with bubler (water steam + N2) | !Wet oxidation with bubler (water steam + N2) | ||
|.||.||x (with special permission)||x||x||x | |.||.||x (with special permission)||x||x||x||. | ||
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!Process temperature | !Process temperature | ||
|800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||1150 <sup>o</sup>C | |800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||1150 <sup>o</sup>C||. | ||
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!Cleanliness of dry oxide (rated 1- | !Cleanliness of dry oxide (rated 1-5, 1 is best) | ||
|2||2||1||3||4||. | |2||2||1||3||4||.||>5 | ||
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!Cleanliness of wet oxide (rated 1-4, 1 is best) | !Cleanliness of wet oxide (rated 1-4, 1 is best) | ||
|1||1||2||3||4||3 | |1||1||2||3||4||3||. | ||
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! Batch size | ! Batch size | ||
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4" | |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"||? | ||
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!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | ||
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| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''D1 APOX''' | | align="center" style="background:#f0f0f0;"|'''D1 APOX''' | ||
| align="center" style="background:#f0f0f0;"|'''Noble''' | |||
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| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x | | New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x||x | ||
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| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||. | | RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||.||x | ||
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| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||.|| | | From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||.||x||x||.||x | ||
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| Wafers directly from PECVD1||.||.||.||x||x||. | | Wafers directly from PECVD1||.||.||.||x||x||.||x | ||
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| Wafers directly from NIL bonding||.||.||.||.||x||. | | Wafers directly from NIL bonding||.||.||.||.||x||.||x | ||
|- | |||
|All materials must enter the furnace||.||.||.||.||.||.||x | |||
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|} | |} | ||