Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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= Alignment of exposure to existing pattern on wafer = | = Alignment of exposure to existing pattern on wafer = | ||
If you need to align an exposure to an existin pattern on a wafer you need wafer marks (or global marks): | If you need to align an exposure to an existin pattern on a wafer you need wafer marks (or global marks): | ||