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Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

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|Process temperature
|Process temperature
|20 <sup>o</sup>C
|180 <sup>o</sup>C


|20 <sup>o</sup>C
|160 <sup>o</sup>C


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|-
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|Possible masking materials:
|Possible masking materials:
|
|
Photoresist (1.5 µm AZ5214E)
Thermal oxide (converted si-rich surface)
LPCVD-oxide (TEOS)
PECVD-oxide
|
|
Photoresist (1.5 µm AZ5214E)
Photoresist (1.5 µm AZ5214E)
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