Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 701: | Line 701: | ||
|- | |- | ||
|- | |- | ||
|4" Si wafer with non-patterned CSAR, postbaked 60 sec @ 130 degC | |4" Si wafer with non-patterned CSAR, <br>postbaked 60 sec @ 130 degC | ||
|nano1.42 | |nano1.42 | ||
|56.5 (based on 2 runs) | |56.5 (based on 2 runs) | ||
| Line 707: | Line 707: | ||
|- | |- | ||
|- | |- | ||
|1/4 4" Si wafer with non-patterned CSAR, not crystal bonded to carrier | |1/4 4" Si wafer with non-patterned CSAR, <br>not crystal bonded to carrier | ||
|nano1.42 | |nano1.42 | ||
|83.3 (based on 3 runs) | |83.3 (based on 3 runs) | ||
| Line 713: | Line 713: | ||
|- | |- | ||
|- | |- | ||
|1/4 4" Si wafer with non-patterned CSAR, crystal bonded to 4" Si carrier | |1/4 4" Si wafer with non-patterned CSAR, <br>crystal bonded to 4" Si carrier | ||
|nano1.42 | |nano1.42 | ||
|54 (based on 1 run) | |54 (based on 1 run) | ||
| Line 719: | Line 719: | ||
|- | |- | ||
|- | |- | ||
|Slice of Si wafer with nano-patterned CSAR, crystal bonded to 4" Si carrier | |Slice of Si wafer with nano-patterned CSAR, <br>crystal bonded to 4" Si carrier | ||
|nano1.42 | |nano1.42 | ||
|54 (based on 1 run) | |54 (based on 1 run) | ||
|100 nm structures: 200 (based on 1 run) | |100 nm structures: 200 (based on 1 run) | ||
50 nm structures: | <br>50 nm structures: | ||
30 nm structues: | <br>30 nm structues: | ||
|- | |- | ||
|} | |} | ||