Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!Sample | !colspan="2"|Sample | ||
!Recipe | !colspan="2"|Recipe | ||
!Etch rate | !rowspan="2"|Etch rate | ||
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|nano1.42 | |nano1.42 | ||
|56.5 nm/min (based on 2 runs) | |56.5 nm/min (based on 2 runs) | ||
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|nano1.42 | |nano1.42 | ||
|56.5 nm/min (based on 2 runs) | |56.5 nm/min (based on 2 runs) | ||
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|1/4 4" Si wafer with non-patterned CSAR, not crystal bonded to carrier | |1/4 4" Si wafer with non-patterned CSAR, not crystal bonded to carrier | ||
|nano1.42 | |||
|83.3 nm/min (based on 3 runs) | |83.3 nm/min (based on 3 runs) | ||
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|1/4 4" Si wafer with non-patterned CSAR, crystal bonded to 4" Si carrier | |1/4 4" Si wafer with non-patterned CSAR, crystal bonded to 4" Si carrier | ||
|nano1.42 | |||
|54 nm/min (based on 1 run) | |||
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|Slice Si wafer with nano-patterned CSAR, crystal bonded to 4" Si carrier | |||
|nano1.42 | |||
|54 nm/min (based on 1 run) | |54 nm/min (based on 1 run) | ||
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