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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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DCH-Employees-701
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DCH-Employees-701
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| Pre-clean: 10 min oxygen clean
| Pre-clean: 10 min oxygen clean
5 min oxygen clean between runs
5 min oxygen clean between runs
|-
|}
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|-
|-style="background:Black; color:White"
!Sample
!Recipe
!Etch rate
|-
|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|1 min @ 110 degC, hotplate
|
|-
|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|mr EBL 6000.1 E-beam resist
60 sec at various spin speed.
Acceleration 2000 s-2,
softbake 3 min at 110 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|-
|-
|}
|}
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