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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|-
|-style="background:Black; color:White"  colspan="3"|'''Recipe nano1.42'''
|+style="background:Black; color:White"  colspan="3"|'''Recipe nano1.42'''
|-
|-
! rowspan="6" align="center"| Recipe
|-
| Gas
! rowspan="5" align="center"| Recipe
| Gasses
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|-
|-
| Pressure
| Pressure
| 4 mTorr, Strike 3 secs @ 15 mTorr
| 4 mTorr,  
Strike: 3 secs @ 15 mTorr
|-
|-
| Power
| Power
| 800 W CP, 40 W PP
| 800 W Coil Power,  
40 W Platen Power
|-  
|-  
| Temperature
| Temperature
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|-
|-
| Hardware
| Hardware
| 100 mm Spacers
| ?
|-
! rowspan="1" align="center"| Conditions
| Time
| 120 secs
|-
! rowspan="3" align="center"| Conditions
| Run ID
| 2017
|-
| Conditioning
| Conditioning
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
| Pre-clean: 10 min oxygen clean
5 min oxygen clean between runs
|-
|-
| Mask
| 211 nm zep etched down to 82 nm
|-
|}
|}
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