Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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 The tests presented here are prelimenary results and this page will be updated regularly. I post this as the interest in etch resistance of CSAR is increasing; if you have wafers or chips you would like to have tested, please send me an [[mailto:tigre@danchip.dtu.dk email]].
+{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
+|-
+|-style="background:Black; color:White"  colspan="3"|'''Recipe nano1.42'''
+|-
+! rowspan="6" align="center"| Recipe
+| Gas
+| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
+|-
+| Pressure
+| 4 mTorr, Strike 3 secs @ 15 mTorr
+|-
+| Power
+| 800 W CP, 40 W PP
+|-
+| Temperature
+| -20 degs
+|-
+| Hardware
+| 100 mm Spacers
+|-
+| Time
+| 120 secs
+|-
+! rowspan="3" align="center"| Conditions
+| Run ID
+| 2017
+|-
+| Conditioning
+| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
+|-
+| Mask
+| 211 nm zep etched down to 82 nm
+|-
+|}