Specific Process Knowledge/Lithography/Baking: Difference between revisions
| Line 45: | Line 45: | ||
[[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250 °C for pretreatment: positioned in C-1]] | [[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250 °C for pretreatment: positioned in C-1]] | ||
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | ||
'''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=117 Oven 250C]''' | |||
<br clear="all" /> | <br clear="all" /> | ||