Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
| Line 37: | Line 37: | ||
|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||
|'''60-65 nm/min (20% etch load) (Feb. 2014)''' | |'''60-65 nm/min (20% etch load) (Feb. 2014)''' | ||
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|- | |- | ||
|Selectivity to resist [SiN : AZ resist] | |Selectivity to resist [SiN : AZ resist] | ||
|'''1:0.75''' | |'''1:0.75''' | ||
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|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
|'''?''' | |'''?''' | ||
| | | | ||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
|? | |? | ||
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|- | |- | ||
|Wafer uniformity map (click on the image to view a larger image) | |Wafer uniformity map (click on the image to view a larger image) | ||
|not measured | |not measured | ||
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|- | |- | ||
|SEM profile images | |SEM profile images | ||
|Not measured | |Not measured | ||
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|- | |- | ||
|Etch rate in Barc | |Etch rate in Barc | ||
| | | | ||
|~50 nm/min (Date: 2014-09-09) | |~50 nm/min (Date: 2014-09-09) | ||
|- | |- | ||
|Etch rate in KRF resist | |Etch rate in KRF resist | ||
| | | | ||
|~40 nm/min (Date: 2014-09-09) | |~40 nm/min (Date: 2014-09-09) | ||
|- | |- | ||
Revision as of 15:51, 2 February 2017
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Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on wafer with 20% load, by Izzet Yildiz @Nanotech | Test by BGHE @danchip |
|---|---|---|
| Etch rate of LPCVD nitride | 60-65 nm/min (20% etch load) (Feb. 2014) | |
| Selectivity to resist [SiN : AZ resist] | 1:0.75 | |
| Wafer uniformity (100mm) | ? | |
| Profile [o] | ? | |
| Wafer uniformity map (click on the image to view a larger image) | not measured | |
| SEM profile images | Not measured | |
| Etch rate in Barc | ~50 nm/min (Date: 2014-09-09) | |
| Etch rate in KRF resist | ~40 nm/min (Date: 2014-09-09) |