Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 349: | Line 349: | ||
|E-beam exposure | |E-beam exposure | ||
|JEOL 9500 E-2 | |JEOL 9500 E-2 | ||
|0.2 nA, aperture 5, dose 180-420 muC/cm2, Shot pitch 7-27 nm | |0.2 nA, aperture 5, dose 180-420 muC/cm2, Shot pitch 7-27 nm, No proximity error correction | ||
|27-08-2014 TIGRE | |27-08-2014 TIGRE | ||
|- | |- | ||
| Line 462: | Line 462: | ||
|- | |- | ||
|} | |} | ||
=== wafer 4.09 === | === wafer 4.09 === | ||