Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]] | |Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]] | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]''' | |||
|Positive | |||
|[http://http://www.microresist.de/home_en.htm MicroResist] | |||
|Standard negative resist | |||
|[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | |||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | |||
|mr DEV | |||
|IPA | |||
|mr REM | |||
|[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]] | |||