Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

Revision as of 15:33, 5 September 2014 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →Alignment of exposure to existing pattern on wafer ← Older edit		Revision as of 15:33, 5 September 2014 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →Alignment of exposure to existing pattern on wafer Newer edit →
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	[[Image:GlobalMark.png\|200px\|thumb\|Text around the wafer mark is NOT recommended.]]		[[Image:GlobalMark.png\|200px\|thumb\|Text around the wafer mark is NOT recommended.]]



	A set of global marks are needed in order to align an exposure to an existing pattern on a wafer. These marks should be clearly visible in a 100keV SEM, i.e. preferably defined by Ti/Au or another 'heavy' metal. Etched global marks or global marks defined by a light metal as Al can be hard to locate manually as well as automatically.		A set of global marks are needed in order to align an exposure to an existing pattern on a wafer. These marks should be clearly visible in a 100keV SEM, i.e. preferably defined by Ti/Au or another 'heavy' metal. Etched global marks or global marks defined by a light metal as Al can be hard to locate manually as well as automatically.