Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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= Alignment of exposure to existing pattern on wafer = | = Alignment of exposure to existing pattern on wafer = | ||
[[ | [[Image:P and Q marks.png|left|250px]] | ||
[[Image:GlobalMark.png|200px|thumb|Text around the wafer mark is NOT recommended.]] | [[Image:GlobalMark.png|200px|thumb|Text around the wafer mark is NOT recommended.]] | ||