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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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'''20nm'''
!colspan="4"|   SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
 
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! width="100" | dose [muC/cm2]
! 207 [muC/cm2]
! width="250" | 230
| [[File:CSAR30nmoverview-10%.png|270px]]
! width="250" | 242
| [[File:CSAR30nmlines-10%.png|270px]]
! width="250" | 253
|NO ACHK READY
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! 230 [muC/cm2]
| [[File:CSAR20nmoverview.png|280px]]
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| [[File:CSAR20nmoverview.png|280px]]
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! 242 [muC/cm2]
| [[File:CSAR20nmoverview+5%.png|280px]]
| [[File:CSAR20nmoverview+5%.png|280px]]
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! 253 [muC/cm2]
| [[File:CSAR20nmoverview+10%.png|280px]]
| [[File:CSAR20nmoverview+10%.png|280px]]
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