Specific Process Knowledge/Lithography/CSAR: Difference between revisions
Appearance
| Line 484: | Line 484: | ||
=== wafer 4.09 === | === wafer 4.09 === | ||
{| class="wikitable collapsible collapsed" | |||
! Simple collapsible table | |||
|- | |||
| Lorem ipsum dolor sit amet | |||
|} | |||
The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures. | The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures. | ||
| Line 539: | Line 545: | ||
|09-07-2014, TIGRE | |09-07-2014, TIGRE | ||
|- | |- | ||
|} | |} | ||