Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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{|style="border: 5px solid black;" style="width: 90%;" align="center" | |||
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!colspan="6"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | |||
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! 230 [muC/cm2] | |||
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmLinesBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmHolesBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmTestBasedose.png|250px]] | |||
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'''50nm''' | '''50nm''' | ||