Jump to content

Specific Process Knowledge/Lithography/CSAR: Difference between revisions

← Older editNewer edit →
VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Line 346: Line 346:
|E-beam exposure
|E-beam exposure
|JEOL 9500 E-2
|JEOL 9500 E-2
|0.2 nA, aperture 5, dose 180-420 muC/cm2, SHOT A,14
|0.2 nA, aperture 5, dose 180-420 muC/cm2, Shot pitch 7-27 nm
|TIGRE
|TIGRE
|-
|-
Line 377: Line 377:
|-
|-
|-style="background:Black; color:White"
|-style="background:Black; color:White"
!colspan="4"|wafer 6.13, 30 nm exposed pattern  
!colspan="4"|Wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
|-
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"