Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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[[Category: Thermal process|Furnace]] | [[Category: Thermal process|Furnace]] | ||
[[Category: Furnaces|A2]] | [[Category: Furnaces|A2]] | ||
==Gate Oxide furnace (A2)== | ==Gate Oxide furnace (A2)== | ||
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This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | ||
'''The user manual, technical information and contact information can be found in LabManager:''' | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]''' | ||
==Process knowledge== | ==Process knowledge== | ||
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | *Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | ||
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | *Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | ||
==Overview of the performance of the Gate Oxide furnace and some process related parameters== | ==Overview of the performance of the Gate Oxide furnace and some process related parameters== | ||
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (it takes too long to grow a thicker oxide) | *Dry SiO<sub>2</sub>: 50Å to ~2000Å (it takes too long to grow a thicker oxide layer) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||