Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions

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[[Category: Thermal process|Furnace]]
[[Category: Thermal process|Furnace]]
[[Category: Furnaces|A2]]
[[Category: Furnaces|A2]]


==Gate Oxide furnace (A2)==
==Gate Oxide furnace (A2)==
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This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  
This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]'''


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page


==Overview of the performance of the Gate Oxide furnace and some process related parameters==
==Overview of the performance of the Gate Oxide furnace and some process related parameters==
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|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide)
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide layer)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range

Revision as of 08:33, 16 January 2017

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Gate Oxide furnace (A2)

Gate Oxide furnace (A2). Positioned in cleanroom B-1

The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.

This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.


The user manual, technical information and contact information can be found in LabManager:

Gate Oxide furnace (A2)


Process knowledge


Overview of the performance of the Gate Oxide furnace and some process related parameters

Purpose
  • Oxidation of silicon (for very clean gate oxide layers)
 Oxidation:
  • Dry
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide layer)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2
  • O2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination
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