Specific Process Knowledge/Thermal Process: Difference between revisions

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*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/C2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''

Revision as of 13:41, 25 August 2014

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