Specific Process Knowledge/Characterization: Difference between revisions
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== Choose characterization topic == | == Choose characterization topic == | ||
*[[/Element analysis|Element analysis]] | |||
*[[/Measurement of film thickness and optical constants|Measurement of film thickness and optical constants]] | |||
*[[/PL Mapper|Photoluminescence mapping]] | |||
*[[/Sample imaging|Sample imaging]] | *[[/Sample imaging|Sample imaging]] | ||
*[[/Stress measurement|Stress measurement]] | |||
*[[/Thickness Measurer|Wafer thickness measurement]] | |||
*[[/Topographic measurement|Topographic measurement]] | *[[/Topographic measurement|Topographic measurement]] | ||
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | *[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | ||
*[[/Four-Point_Probe|Four-Point_Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | *[[/Four-Point_Probe|Four-Point_Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | ||
Revision as of 07:58, 22 August 2014
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy